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Quartz Apparatus Fused Quartz Semiconductor Wafer Carrier Ultra Thin
Products features:
Clear and clean,
High homogeneity
High temperature resistant
High light transmission
Anti chemistry attack
Working temperature:
Regular working temperature: 1000°C
Working temperature for short term:1100°C
instant working max temperature:1300°C
Mechanical Property:
Mechanical Property | Reference Value | Mechanical Property | Reference Value |
Density | 2.203g/cm3 | Refractive Index | 1.45845 |
Compressive Strength | >1100Mpa | Coefficient of thermal expansion | 5.5×10-7cm/cm.°C |
Bending Strength | 67Mpa | Hot work temperature | 1750~2050°C |
Tensile Strength | 48.3Mpa | The temperature for a short time | 1300°C |
Poisson's Ratio | 0.14~0.17 | The temperature for a long time | 1100°C |
Elastic Modulus | 71700Mpa | Resistivity | 7×107Ω.cm |
Shearing Modulus | 31000Mpa | Dielectric Strength | 250~400Kv/cm |
Moths Hardness | 5.3~6.5(Moths Scale) | Dielectric Constant | 3.7~3.9 |
Deformation Point | 1280°C | Dielectric absorption coefficient | <4×104 |
Specific Heat(20~350°C) | 670J/kg °C | Dielectric loss coefficient | <1×104 |
Thermal Conductivity(20°C) | 1.4W/m °C |